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| SMD Type N-Channel 2.5-V (G-S) MOSFET KI5404BDC IC IC Features TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 45 80 18 TJ, Tstg )* TA = 25 TA = 70 IDM IS PD 2.1 2.5 1.3 -55 to 150 260 Max 50 95 22 /W Unit 20 1.1 1.3 0.7 W Symbol VDS VGS ID 7.5 5 secs Steady State 20 12 5.4 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5404BDC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 2%. IF = 1.1 A, di/dt = 100 A/ s VDD = 10 V, RL = 10 ID = 1 A, VGEN = 4.5V, RG = 6 VDS = 10 V, VGS = 4.5 V, ID = 5.4 A Testconditons VDS = VGS, ID = 250 iA VDS = 0 V, VGS = 12 V Min 0.6 Typ Max 1.5 100 1 5 20 0.022 0.031 26 0.7 7 1.7 2 1.7 12 12 25 10 20 20 20 40 20 40 11 0.028 0.039 IC IC Unit V nA A A A VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.4 A VGS = 2.5 V, ID = 2.6 A VDS = 10 V, ID = 5.4 A IS = 1.1 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn |
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